Carl-Mikael Zetterling: search on Z-Library

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1

Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes

Hou, Shuoben, Hellstrom, Per-Erik, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Journal of the Electron Devices Society

Year:

2018

Language:

english

File:

PDF, 2.18 MB

english, 2018

2

Wide Temperature Range Integrated Bandgap Voltage References in 4H-SiC

Hedayati, Raheleh, Lanni, Luigia, Rusu, Ana, Zetterling, Carl-Mikael

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 1.09 MB

english, 2015

3

Intertwined Design: A Novel Lithographic Method to Realize Area Efficient High-Voltage SiC BJTs and Darlington Transistors

Elahipanah, Hossein, Salemi, Arash, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 5.11 MB

english, 2016

4

550 °C 4H-SiC PIN Photodiode Array with Two-Layer Metallization

Hou, Shuoben, Hellstrom, Per-Erik, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Electron Device Letters

Year:

2016

Language:

english

File:

PDF, 4.62 MB

english, 2016

5

Optimal Emitter Cell Geometry in High Power 4H-SiC BJTs

Salemi, Arash, Elahipanah, Hossein, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 652 KB

english, 2015

6

[IEEE 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Singapore, Singapore (2019.3.12-2019.3.15)] 2019 Electron Devices Technology and Manufacturing Conference (EDTM) - Process Control and Optimization of 4H-SiC Semiconductor Devices and Circuits

Hou, Shuoben, Shakir, Muhammad, Hellstrom, Per-Erik, Zetterling, Carl-Mikael, Ostling, Mikael

Year:

2019

File:

PDF, 210 KB

2019

7

Integrated circuits in silicon carbide for high-temperature applications

Zetterling, Carl-Mikael

Journal:

Year:

2015

Language:

english

File:

PDF, 774 KB

english, 2015

8

Silicon Carbide Bipolar Analog Circuits for Extreme Temperature Signal Conditioning

Roy, Sajib, Rashid, Arman Ur, Abbasi, Affan, Murphree, Robert C., Hossain, MD Maksudul, Faruque, Asif, Metreveli, Alex, Zetterling, Carl-Mikael, Fraley, John, Sparkman, Brett, Mantooth, H. Alan

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 1.88 MB

english, 2019

9

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Area- and efficiency-optimized junction termination for a 5.6 kV SiC BJT process with low ON-resistance

Salemi, Arash, Elahipanah, Hossein, Malm, Gunnar, Zetterling, Carl-Mikael, Ostling, Mikael

Year:

2015

Language:

english

File:

PDF, 511 KB

english, 2015

10

Junction barrier Schottky diodes in 6H SiC

Carl-Mikael Zetterling, Fanny Dahlquist, Nils Lundberg, Mikael Östling, Kurt Rottner, Lennart Ramberg

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 144 KB

english, 1998

11

[IEEE 2012 IEEE Custom Integrated Circuits Conference - CICC 2012 - San Jose, CA, USA (2012.09.9-2012.09.12)] Proceedings of the IEEE 2012 Custom Integrated Circuits Conference - Present and future applications of Silicon Carbide devices and circuits

Zetterling, Carl-Mikael

Year:

2012

Language:

english

File:

PDF, 959 KB

english, 2012

12

555-Timer and Comparators Operational at 500 °C

Shakir, Muhammad, Hou, Shuoben, Metreveli, Alexey, Rashid, Arman Ur, Mantooth, Homer Alan, Zetterling, Carl-Mikael

Journal:

IEEE Transactions on Electron Devices

Year:

2019

Language:

english

File:

PDF, 3.34 MB

english, 2019

13

[IEEE 19th International Symposium on Power Semiconductor Devices and IC's - Jeju, Korea (2007.05.27-2007.05.31)] Proceedings of the 19th International Symposium on Power Semiconductor Devices and IC's - Influence of the base contact on the electrical characteristics of SiC BJTs

Lee, Hyung-Seok, Domeij, Martin, Zetterling, Carl-Mikael, Ostling, Mikael, Heinze, Birk, Lutz, Josef

Year:

2007

Language:

english

File:

PDF, 2.56 MB

english, 2007

14

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Conductivity modulated on-axis 4H-SiC 10+ kV PiN diodes

Salemi, Arash, Elahipanah, Hossein, Buono, Benedetto, Hallen, Anders, Hassan, Jawad Ul, Bergman, Peder, Malm, Gunnar, Zetterling, Carl-Mikael, Ostling, Mikael

Year:

2015

Language:

english

File:

PDF, 814 KB

english, 2015

15

Bipolar integrated circuits in SiC for extreme environment operation

Zetterling, Carl-Mikael, Hallén, Anders, Hedayati, Raheleh, Kargarrazi, Saleh, Lanni, Luigia, Malm, B Gunnar, Mardani, Shabnam, Norström, Hans, Rusu, Ana, Suvanam, Sethu Saveda, Tian, Ye, Östling, Mik

Journal:

Semiconductor Science and Technology

Year:

2017

Language:

english

File:

PDF, 452 KB

english, 2017

16

A Fully Integrated Silicon-Carbide Sigma-Delta Modulator Operating up to 500 °C

Tian, Ye, Zetterling, Carl-Mikael

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.43 MB

english, 2017

17

15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain

Salemi, Arash, Elahipanah, Hossein, Jacobs, Keijo, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 1.03 MB

english, 2018

18

Foreword

Michael Capano, Russ Dupuis, Joan Redwing, Carl-Mikael Zetterling

Journal:

Journal of Electronic Materials

Year:

2002

Language:

english

File:

PDF, 39 KB

english, 2002

19

Comparison of Thermal Gate Oxides on Silicon and Carbon Face P-Type 6H Silicon Carbide

Zetterling, Carl-Mikael, Östling, Mikael

Journal:

MRS Proceedings

Year:

1994

Language:

english

File:

PDF, 333 KB

english, 1994

20

Future high temperature applications for SiC integrated circuits

Carl-Mikael Zetterling, Luigia Lanni, Reza Ghandi, B. Gunnar Malm, Mikael Östling

Journal:

physica status solidi (c)

Year:

2012

Language:

english

File:

PDF, 409 KB

english, 2012

21

[IEEE ESSDERC 2016 - 46th European Solid-State Device Research Conference - Lausanne, Switzerland (2016.9.12-2016.9.15)] 2016 46th European Solid-State Device Research Conference (ESSDERC) - Wide temperature range integrated amplifier in bipolar 4H-SiC technology

Hedayati, Raheleh, Lanni, Luigia, Rusu, Ana, Zetterling, Carl-Mikael

Year:

2016

Language:

english

File:

PDF, 782 KB

english, 2016

22

High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology

Tian, Ye, Zetterling, Carl-Mikael

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.74 MB

english, 2017

23

[IEEE 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Oxford, United Kingdom (2013.9.23-2013.9.27)] 2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) - Effects of 3 MeV protons on 4H-SiC bipolar devices and integrated OR-NOR gates

Suvanam, Sethu Saveda, Lanni, Luigia, Malm, Bengt Gunnar, Zetterling, Carl-Mikael, Hallen, Anders

Year:

2013

Language:

english

File:

PDF, 1.74 MB

english, 2013

24

SiC Bipolar Power Transistors - Design and Technology Issues for Ultimate Performance

Ostling, Mikael, Domeij, Martin, Zaring, Carina, Konstantinov, Andreij, Ghandi, Reza, Buono, Benedetto, Hallen, Anders, Zetterling, Carl-Mikael

Journal:

MRS Proceedings

Year:

2010

Language:

english

File:

PDF, 442 KB

english, 2010

25

500 °C Bipolar SiC Linear Voltage Regulator

Kargarrazi, Saleh, Lanni, Luigia, Saggini, Stefano, Rusu, Ana, Zetterling, Carl-Mikael

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.27 MB

english, 2015

26

UV–ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide

Carl-Mikael Zetterling, Mikael Östling, Chris I Harris, Peter C Wood, S.Simon Wong

Journal:

Materials Science in Semiconductor Processing

Year:

1999

Language:

english

File:

PDF, 121 KB

english, 1999

27

Deposition of diamond films on single crystalline silicon carbide substrates

Mukherjee, Debarati, Oliveira, Filipe, Trippe, Simone Camargo, Rotter, Shlomo, Neto, Miguel, Silva, Rui, Mallik, Awadesh Kumar, Haenen, Ken, Zetterling, Carl-Mikael, Mendes, Joana Catarina

Journal:

Diamond and Related Materials

Year:

2019

Language:

english

File:

PDF, 2.74 MB

english, 2019

28

A 600 °C TTL-based 11-stage Ring Oscillator in Bipolar Silicon Carbide Technology

Shakir, Muhammad, Hou, Shuoben, Malm, Bengt Gunnar, Ostling, Mikael, Zetterling, Carl-Mikael

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 5.97 MB

english, 2018

29

A 4H-SiC BJT as a Switch for On-chip Integrated UV Photodiode

Hou, Shuoben, Hellstrom, Per-Erik, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Electron Device Letters

Year:

2018

Language:

english

File:

PDF, 298 KB

english, 2018

30

SPIE Proceedings [SPIE SPIE Proceedings - (Sunday 12 February 2012)] - Thin films in silicon carbide semiconductor devices

Ostling, Mikael, Koo, Sang-Mo, Lee, Sang-Kwon, Zetterling, Carl-Mikael, Grishin, Alexander, Chu, Junhao, Lai, Zongsheng, Wang, Lianwei, Xu, Shaohui

Year:

2012

Language:

english

File:

PDF, 284 KB

english, 2012

31

A Comprehensive Study on the Geometrical Effects in High-Power 4H–SiC BJTs

Salemi, Arash, Elahipanah, Hossein, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 1.93 MB

english, 2017

32

Editorial EIC

Nathan, Arokia, Pavan, Paolo, Zetterling, Carl-Mikael

Journal:

IEEE Journal of the Electron Devices Society

Year:

2017

Language:

english

File:

PDF, 220 KB

english, 2017

33

[IEEE 2017 75th Device Research Conference (DRC) - South Bend, IN, USA (2017.6.25-2017.6.28)] 2017 75th Annual Device Research Conference (DRC) - Scaling of 4H-SiC p-i-n photodiodes for high temperature applications

Hou, Shuoben, Hellstrom, Per-Erik, Zetterling, Carl-Mikael, Ostling, Mikael

Year:

2017

Language:

english

File:

PDF, 921 KB

english, 2017

34

Structural and electrical characteristics of oxygen-implanted 6H-SiC

Lianwei Wang, Jipo Huang, Xinzhong Duo, Zhitang Song, Chenglu Lin, Carl-Mikael Zetterling, Mikael Östling

Journal:

Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Year:

2000

Language:

english

File:

PDF, 106 KB

english, 2000

35

500 °C High Current 4H-SiC Lateral BJTs for High-Temperature Integrated Circuits

Elahipanah, Hossein, Kargarrazi, S., Salemi, A., Ostling, Mikael, Zetterling, Carl-Mikael

Journal:

IEEE Electron Device Letters

Year:

2017

Language:

english

File:

PDF, 929 KB

english, 2017

36

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 Â°C

Hou, Shuoben, Shakir, Muhammad, Hellstrom, Per-Erik, Malm, Bengt Gunnar, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

IEEE Journal of the Electron Devices Society

Year:

2020

File:

PDF, 1.09 MB

2020

37

Ferroelectric Pb(Zr[sub 0.52]Ti[sub 0.48])/SiC field-effect transistor

Koo, Sang-Mo, Khartsev, Sergey, Zetterling, Carl-Mikael, Grishin, Alex, Östling, Mikael

Journal:

Applied Physics Letters

Year:

2003

Language:

english

File:

PDF, 279 KB

english, 2003

38

SiC BJT Compact DC Model With Continuous-Temperature Scalability From 300 to 773 K

Tian, Ye, Hedayati, Raheleh, Zetterling, Carl-Mikael

Journal:

IEEE Transactions on Electron Devices

Year:

2017

Language:

english

File:

PDF, 2.87 MB

english, 2017

39

A study on positive-feedback configuration of a bipolar SiC high temperature operational amplifier

Kargarrazi, Saleh, Lanni, Luigia, Zetterling, Carl-Mikael

Journal:

Solid-State Electronics

Year:

2016

Language:

english

File:

PDF, 2.02 MB

english, 2016

40

Ferroelectric thin films on silicon carbide for next-generation nonvolatile memory and sensor devices

Mikael Östling, Sang-Mo Koo, Carl-Mikael Zetterling, Sergey Khartsev, Alex Grishin

Journal:

Thin Solid Films

Year:

2004

Language:

english

File:

PDF, 613 KB

english, 2004

41

Optimization of Poly-silicon Process for 3C-SiC Based MOS Devices

Esteve, Romain, Schoner, Adolf, Reshanov, Sergey A., Zetterling, Carl-Mikael

Journal:

MRS Proceedings

Year:

2010

Language:

english

File:

PDF, 139 KB

english, 2010

42

500°C SiC PWM Integrated Circuit

Kargarrazi, Saleh, Elahipanah, Hossein, Saggini, Stefano, Senesky, Debbie, Zetterling, Carl-Mikael

Journal:

IEEE Transactions on Power Electronics

Year:

2018

Language:

english

File:

PDF, 1.63 MB

english, 2018

43

[IEEE 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - Shanghai, China (2019.5.19-2019.5.23)] 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) - 500°C SiC-based driver IC for SiC power MOSFETs

Kargarrazi, Saleh, Elahipanah, Hossein, Tong, Zikang, Senesky, Debbie, Zetterling, Carl-Mikael

Year:

2019

Language:

english

File:

PDF, 1.51 MB

english, 2019

44

[IEEE 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - Hong Kong, China (2015.5.10-2015.5.14)] 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) - A monolithic SiC drive circuit for SiC Power BJTs

Kargarrazi, Saleh, Lanni, Luigia, Rusu, Ana, Zetterling, Carl-Mikael

Year:

2015

Language:

english

File:

PDF, 1.27 MB

english, 2015

45

Lateral p-n-p Transistors and Complementary SiC Bipolar Technology

Lanni, Luigia, Malm, Bengt Gunnar, Ostling, Mikael, Zetterling, Carl-Mikael

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 594 KB

english, 2014

46

Influence of Passivation Oxide Thickness and Device Layout on the Current Gain of SiC BJTs

Lanni, Luigia, Malm, Bengt Gunnar, Ostling, Mikael, Zetterling, Carl-Mikael

Journal:

IEEE Electron Device Letters

Year:

2015

Language:

english

File:

PDF, 818 KB

english, 2015

47

Silicon Carbide Fully Differential Amplifier Characterized Up to 500 °C

Tian, Ye, Lanni, Luigia, Rusu, Ana, Zetterling, Carl-Mikael

Journal:

IEEE Transactions on Electron Devices

Year:

2016

Language:

english

File:

PDF, 3.46 MB

english, 2016

48

[IEEE 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Fayetteville, AR, USA (2016.11.7-2016.11.9)] 2016 IEEE 4th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - High-temperature passive components for extreme environments

Colmenares, Juan, Kargarrazi, Saleh, Elahipanah, Hossein, Nee, Hans-Peter, Zetterling, Carl-Mikael

Year:

2016

Language:

english

File:

PDF, 564 KB

english, 2016

49

Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

Ekström, Mattias, Khartsev, Sergiy, Östling, Mikael, Zetterling, Carl-Mikael

Journal:

Journal of Electronic Materials

Year:

2017

Language:

english

File:

PDF, 920 KB

english, 2017

50

Growth of SiC Thin Films on (100) and (111) Silicon by Pulsed Laser Deposition Combined with a Vacuum Annealing Process

Huang, Jipo, Wang, Lianwei, Wen, Jun, Wang, Yuxia, Lin, Chenglu, Zetterling, Carl-Mikael, Ostling, Mikael

Journal:

MRS Proceedings

Year:

1999

Language:

english

File:

PDF, 608 KB

english, 1999

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